"Nanoserf" and "Solar-MH" installations (produced by "Nanoengineering" Ltd., Russia)

"Nanoserf" and "Solar-MN" installations are used for the synthesis of thin films of various compounds (Al₂O₃, TiO₂, ZnO, HfO₂, VO₂, SnO₂ et al.) designed thickness (from angstrom to micrometers) on the surface of flat, "3D" substrates and dispersed materials by Atomic Layer Deposition (ALD).

Application fields:  microelectronics, micromechanics, solar cells, optics, optoelectronics, fuel cells, supercapacitors, sensors, etc.

Technical characteristics:

1. Dimensions of the reaction chamber:

• "Nanoserf" – 40 x 100 x 150 mm;
• "Solar- MN" – 20 x 210 x 250 mm.

2. Number of precursor lines:

• "Nanoserf" – 3 precursor vapor lines, 1 line for injecting liquid precursor;
• "Solar-MN" – 5  precursor vapor lines, 1 line for injecting liquid precursor.

(nonvolatile solid reactants can be fed to the reactor by injection of a solution in a volatile solvent)

3. Temperature of the reaction chamber – up to 300^oC.

4. Film growth rate – up to 100 nm per hour.

5. Uniformity of film thickness over the area of the substrate (diameter 100 mm): thickness deviation < 2-5% (depending on the film type,  thickness and the precursors used).

6. The synthesis is conducted in carrier gas flow (nitrogen, argon) at a pressure of 0.1-50 Torr.