Study of the distribution of elements over the depth is carried out using the technique of a raster ion profiling. Essence of a technique is the following: investigated surface alternately etched with argon ions and study by XPS. The result is a set of photoelectron spectra at different time of surface etching. Etching time determines the thickness of sputtered layer. For example, calibration using an atomic force microscope provides a quantitative relation between depth and time of etching.